PART |
Description |
Maker |
IS42S16160D IS42S16160D-6B IS42S16160D-6BI IS42S16 |
32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
|
M36W416TG85ZA1T M36W416TG70ZA6T M36W416TG-ZAT M36W |
16 Mbit 1Mb x16, Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM, Multiple Memory Product CANMS3470L16-23PL/C 16兆x16插槽,开机区块快闪记忆体Mbit的SRAM56Kb x16,内存产品多
|
意法半导 STMicroelectronics N.V.
|
MS58128J-45 MS58128J-55 UT68128LF-100 UT68128LF-15 |
IC 8MEG FLSH (512KX16) BOTTOM IC 8MEG FLSH (512KX16) TOP SE IC Flash Mem PARL 2.7v To 3.6v 8-MBit 512kx16/1mx8 90ns 48TSOP IC Flash Mem PARL 2.7v To 3.6v 8-MBit 512kx16/1mx8 70ns 48TSOP x8的SRAM x8 SRAM x8的SRAM
|
Intel, Corp.
|
IS43R32400A-6B IS43R32400A-6BI IS43R32400A-6BL IS4 |
4Meg x 32 128-MBIT DDR SDRAM
|
Integrated Silicon Solution, Inc
|
IS45S32400B-6BA1 |
4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
http://
|
MT45W8MW16BGX |
8MEG X 16 Async/Page/Burst CellularRAM Memory
|
Micron Technology
|
M36WT8B10ZA6T M36WT8B70ZA6T M36WT864T70ZA6T M36WT8 |
HEATSHRINK BLACK 4IN X 50FT 64兆位4Mb的x16插槽,多银行,突发闪存和8兆位的SRAM12k x16,内存产品多 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product 64兆位4Mb的x16插槽,多银行,突发闪存和8兆位的SRAM12k x16,内存产品多
|
STMicroelectronics N.V. 意法半导
|
SST39LF160-70-4I-EK SST39VF160-70-4I-EK SST39VF160 |
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 70 ns, PDSO48 17.5 mm (0.69 inch) General Purpose 8x8 Dot Matrix Alphanumeric Displays 16兆位(x16)的多用途闪 64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 3V PROM, 55 ns, PDSO48 64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 90 ns, PDSO48 64 Mbit (x16) Multi-Purpose Flash Plus 64兆位(x16)的多功能闪存加
|
Silicon Storage Technology, Inc.
|
HY62SF16403ALLM-10 HY62SF16403ALLM-10I HY62SF16403 |
x16 SRAM x16|1.8V|85/100|Super Low Power Slow SRAM - 4M x16 | 1.8 | 85/100 |超级低功耗SRAM的速度 4
|
Alpha Industries, Inc.
|
MB84VP23481FK-70PBS MB84VP23481FK-70 |
64M (X16) Page FLASH MEMORY & 32M (X16) Mobile FCRAMTM
|
SPANSION[SPANSION]
|